ZENG Xiangyong 1, XU Haixian 2, 3, ZHU Jiaxu 2, 3, ZHANG Hao 2, 3, CUI Song 3, 4, LI Jingwei 1, TANG Wenming 1, 4
(1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, Anhui, China;2. Hefei Shengda Electronic Technology Industry Co. Ltd., Hefei 230088, Anhui, China; 3. 43 Institute, ChinaElectronics Technology Group Corporation, Hefei 230088, Anhui, China; 4. Anhui Province Key Laboratory of Microsystem, Hefei 230088, Anhui, China)
Abstract: Reliability and service life of electronic devices depend on heat dissipation capacity of the ceramic substrates to a great extent. Copper/ceramic substrates have excellent thermal conductivity and insulation properties, as well as high current carrying capacity and strength. Therefore, they have become the best choice as substrates for high-power electronic devices. As an important method to bond ceramic substrate and Cu foil, active metal brazing (AMB) has higher reliability than the direct bonding copper (DBC) technique. Even so, the interfacial bonding strength is still greatly affected by brittle phase, residual thermal stress and so on, which should be further improved. Key issues, including interfacial wetting and reaction, as well as residual stress generated during AMB, were introduced, while research progress in improving the interfacial bonding strength of the AMB substrate was summarized. Outlook on future development of this research area was speculated.
Key words: active metal brazing; ceramic substrate; bonding strength; wettability; residual stress; cycle life