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Effect of Interface Modification on the Performances of SnO2-based Perovskite Solar Cells

 WANG Yanxiang, GAO Peiyang, FAN Xueyun, LI Jiake, GUO Pingchun, HUANG Liqun, SUN Jian

(Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)

Abstract: With SnO2 as the electron transport layer (ETL), CTAB was used to modify the interface of ETL. In this case, CTAB was supposed to fill the pores and passivate the surface defect of the device. In this paper, the effect of the doping concentration (0.005-0.015 mol/L) of CTAB solution on photoelectric conversion efficiency of the device was studied, while the mechanism of the effect was elucidated. With SEM, AFM, PL, EIS, JV and transmittance tests, surface morphology, phase composition and photoelectric properties of the samples were systematically studied. As the interface modification concentration was 0.010 mol/L, an optimal photoelectric conversion efficiency (PCE) of 16.90% was achieved, with fill factor (FF) of 74.80%, short-circuit current density (JSC) of 20.53 mA/cm2 and open-circuit voltage (VOC) of 1.10 V.
Key words: perovskite solar cell; electron transport layer; CTAB; interface modification

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