ZHANG Zhiqing, HU Yuehui, ZHANG Xiaohua, HU Keyan, CHEN Yichuan, ZHU Wenjun, SHUAI Weiqiang, LAO Zixuan
(Department of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, Jiangxi, China)

Abstract：Ga-doped ZnO thin films (GZO) were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering power on the optical and electrical properties of GZO thin films were studied. X-ray diffraction, scanning electron microscopy (SEM), internal stress, ultraviolet and visible spectra, photoluminescence spectra and electrical properties of GZO thin films were analyzed under different sputtering power. The results show that with the increase of sputtering power, the GZO film keeps a good C-axis preferred orientation, the crystallinity of the film increases, the grain boundary decreases, the grain size increases, the transmittance decreases, the defect of the film decreases, and the square resistance of the film surface decreases.

Key words: sputtering power; grain size; sheet resistivity; transmittance