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Preparation and Electrical Properties of Ag NWs@SH-GO Transparent Conductive Composite Films

WANG Di, CHEN Yichuan, HU Yuehui, ZHANG Zhiqin, GAO Hao, LIU Huiwen, GAO Youliang
(School of Mechanical and Electronic Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, Jiangxi, China)

Abstract:  In order to solve the problems of high resistance and poor electrical stability of Ag nanowires (NWs) transparent conductive films (Ag NWs-TCFs), mercaptoethylamine mercapto group was grafted to GO to self-assemble thiol-functionalized graphene oxide (SH-GO). Accordingly, Ag NWs@SH-GO composite transparent conductive films were obtained by combining the SH-GO functional group with Ag NWs. As the concentration of SH-GO was 3 mg/mL, the sheet resistance of the Ag NWs @SH-GO composite conductive film was 8.6 Ω/sq, while the optical transmittance was >85% at 550 nm. After being placed in the air for 60 days, the sheet resistance was increased by only 8.66%, showing excellent environmental stability. After bending for 1000 cycles, sheet resistance of the sample was still <50.0 Ω/sq, illustrating good mechanical bending resistance.

Key words:  thiol-functionalized graphene; transparent conductive films; electrical stability

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