CHEN Jun, HU Yuehui, HU Honghao, ZHANG Xiaohua, CHEN Yichuan, CHEN Xinhua

（School of Mechanical and Electrical Engineering, Jingdezhen Ceramic Institute, Jingdezhen, Jiangxi 333000, China）

Abstract: Transparent Sn-doped ZnO (ZnO:Sn) thin films were prepared on silica glass substrates by the sol-gel method. The effects of different drying temperatures and annealing temperatures on the crystallinity, structural, optical and electrical properties of the films were investigated. The ZnO：Sn thin films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Ultra Violet-visible spectra (UV-VIS) and four-point probe method. The results show that ZnO : Sn thin films prepared by drying at 300 ℃ for 10 minutes, then annealed in the air at 700 ℃ for 1 hour have the smoother surface, the high-preferential c-axis orientation, the average transmittance of 92 % and the resistivity of 13.6 Ω·cm.

Key words： transparent oxide semiconductors; ZnO thin films; Sn doping; sol-gel method